Ferromagnetic resonance of dry etched permalloy thin films

Author

Kim, S.D. ; Lee, J.J. ; Kim, K.H. ; Lim, S.H. ; Kim, H.J.

Author_Institution

Res. Center for Thin Film Fabrication, Seoul Nat. Univ., South Korea

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

3397

Lastpage

3399

Abstract

Permalloy thin films deposited by rf magnetron sputtering are ion beam etched or reactive ion etched. Effects of the dry etching on magnetic properties are examined by ferromagnetic resonance and the results are shown as a function of film thickness (etching time). The perpendicular resonance field shifts toward a higher field as ion beam etching proceeds, but it moves to a lower field in the case of reactive ion etching. The effective magnetization of ion beam etched thin films is slightly increased, but the opposite behavior is observed in reactive ion etched thin films. The exchange stiffness constant decreases gradually with ion beam etching whereas a sudden drop to about 5×10^-7 erg/cm occurs by reactive ion etching. This result can be explained by a surface etching-damaged layer

Keywords

Permalloy; exchange interactions (electron); ferromagnetic materials; ferromagnetic resonance; magnetic thin films; magnetisation; sputter etching; sputtered coatings; surface magnetism; NiFe; dry etched Permalloy thin films; effective magnetization; exchange stiffness constant; ferromagnetic resonance; film thickness; ion beam etching; magnetic properties; perpendicular resonance field; reactive ion etching; rf magnetron sputtering; surface etching-damaged layer; Dry etching; Identity-based encryption; Ion beams; Magnetic films; Magnetic properties; Magnetic resonance; Materials science and technology; Sputter etching; Sputtering; Transistors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800536

Filename

800536