Title :
Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors
Author :
Qian, Y. ; Zhu, Z.H. ; Lo, Y.H. ; Huffaker, D.L. ; Deppe, D.G. ; Hou, H.Q. ; Hammons, B.E. ; Lin, W. ; Tu, Y.K.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
7/1/1997 12:00:00 AM
Abstract :
We demonstrate a new structure for long-wavelength (1.3-μm) vertical-cavity top-surface-emitting lasers using proton implantation for current confinement. Wafer bonded GaAs-AlAs Bragg mirrors and dielectric mirrors are used for bottom and top mirrors, respectively. The gain medium of the lasers consists of nine strain-compensated AlGaInAs quantum wells. A record low room temperature pulsed threshold current density of 1.13 kA/cm2 has been achieved for 15-μm diameter devices with a threshold current of 2 mA. The side-mode-suppression-ratio is greater than 35 dB.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; ion implantation; laser mirrors; quantum well lasers; surface emitting lasers; wafer bonding; 1.3 mum; 15 mum; 2 mA; GaAs-AlAs; InP-AlGaInAs; VCSEL; current confinement; dielectric mirrors; low-threshold; proton implantation; room temperature pulsed threshold current density; side-mode-suppression-ratio; strain-compensated AlGaInAs quantum wells; threshold current; vertical-cavity top-surface-emitting lasers; wafer-bonded GaAs-AlAs Bragg mirrors; Dielectrics; Light sources; Mirrors; Protons; Quantum well lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
