Title :
A vertical-cavity surface-emitting laser appliqued to a 0.8-μm NMOS driver
Author :
Mathine, D.L. ; Droopad, R. ; Maracas, G.N.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
7/1/1997 12:00:00 AM
Abstract :
An optoelectronic integrated circuit (OEIC) composed of a vertical-cavity surface-emitting laser (VCSEL) appliqued to an NMOS drive circuit was fabricated to form an optical link from the CMOS chip. A custom NMOS circuit was designed and fabricated through the MOSIS foundry service in a standard 0.8-μm CMOS process. InGaAs quantum-well VCSELs were grown, fabricated and tested on an n-type GaAs substrate. Next, the VCSELs underwent a substrate removal technique and were appliqued to the NMOS circuitry. The OEIC was tested at the chip level and showed an electrical to optical conversion efficiency of 1.09 mW/V. Modulation results are also discussed.
Keywords :
CMOS integrated circuits; application specific integrated circuits; driver circuits; integrated circuit technology; integrated circuit testing; integrated optoelectronics; optical interconnections; optical modulation; quantum well lasers; surface emitting lasers; 0.8 mum; CMOS chip; GaAs; InGaAs quantum-well VCSELs; InGaAs-GaAs; MOSIS foundry service; NMOS drive circuit; OEIC; VCSEL; applique technique; chip level testing; custom NMOS circuit; electrical to optical conversion efficiency; modulation results; n-type GaAs substrate; optical link; optoelectronic integrated circuit; substrate removal technique; vertical-cavity surface-emitting laser; CMOS integrated circuits; Circuit testing; Driver circuits; Foundries; MOS devices; Optical fiber communication; Optoelectronic devices; Photonic integrated circuits; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
