Title :
Wavelength shift of selectively oxidized Al/sub x/O/sub y/-AlGaAs-GaAs distributed Bragg reflectors
Author :
MacDougal, Michael H. ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
7/1/1997 12:00:00 AM
Abstract :
The effect of multiple oxidations on Al/sub x/O/sub y/-GaAs DBRs and Al/sub x/O/sub y/-AlGaAs-GaAs DBRs is investigated. With a compositionally graded AlGaAs layer, the oxide DBR remains stable under thermal stress, whereas without it, the DBR fractures. The stopband of the oxide DBR with the AlGaAs layer shifts when sequenced through multiple oxidation processes, which is attributed to the vertical oxidation of the AlGaAs. The resonance wavelength of a Fabry-Perot cavity containing an oxide DBR shifts 6 nm after 30 min of additional oxidation at 425/spl deg/C.
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mirrors; optical fabrication; oxidation; reflectivity; semiconductor-insulator boundaries; surface emitting lasers; thermal stability; 30 min; 425 C; AlO-AlGaAs-GaAs; DBR fracture; Fabry-Perot cavity; GaAs; VCSEL; compositionally graded AlGaAs layer; multiple oxidations; oxide DBR stability; reflectivity spectra; resonance wavelength; selectively oxidized Al/sub x/O/sub y/-AlGaAs-GaAs distributed Bragg reflectors; thermal stress; vertical oxidation; wavelength shift; Distributed Bragg reflectors; Gallium arsenide; Oxidation; Reflectivity; Resonance; Semiconductor lasers; Surface emitting lasers; Thermal stability; Thermal stresses; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
