Wavelength trimming by photoabsorption-included disordering for multiple-wavelength distributed-feedback laser arrays

Author

Sudoh, T.K. ; Kumano, M. ; Nakano, Y. ; Tada, K.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

887

Lastpage

888

Abstract

We describe a simple method to adjust the oscillation wavelength of distributed-feedback (DFB) lasers after the device fabrication without using any external active tuning. The method utilizes a permanent change of refractive index in the quantum well active layer induced by external laser beam irradiation. We have demonstrated 0.36 nm adjustment in a 1.55-μm ridge waveguide DFB laser.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser beam effects; laser tuning; quantum well lasers; refractive index; semiconductor laser arrays; waveguide lasers; wavelength division multiplexing; 1.55 mum; InGaAs-InP; MQW laser; WDM application; external laser beam irradiation; multiple-wavelength distributed-feedback laser arrays; oscillation wavelength; photoabsorption-included disordering; photocurrent spectra; quantum well active layer; quantum-well disordering; refractive index change; ridge waveguide DFB laser; wavelength trimming; Laser beams; Laser transitions; Laser tuning; Optical arrays; Quantum well devices; Quantum well lasers; Refractive index; Semiconductor laser arrays; Waveguide lasers; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593334

Filename

593334