20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications

Author

Delprat, D. ; Ramdane, A. ; Silvestre, L. ; Ougazzaden, A. ; Delorme, F. ; Slempkes, S.

Author_Institution

France Telecom, CNET, Bagneux, France

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

898

Lastpage

900

Abstract

For the first time, selective area growth (SAG) has been used for the monolithic integration of a distributed Bragg reflector (DBR) laser with an electroabsorption (EA) modulator, designed for WDM communication systems at 1.55 μm. A 16-GHz bandwidth combined with a 6-nm tuning range make this component compatible with multiwavelength 20-Gb/s transmission experiments.

Keywords

distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; integrated optics; laser tuning; multiplexing equipment; optical transmitters; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; wavelength division multiplexing; 1.55 mum; 16 GHz; 20 Gbit/s; 6-nm tuning range; WDM applications; WDM communication systems; bandwidth; distributed Bragg reflector; electroabsorption modulator; integrated DBR laser-EA modulator; monolithic integration; selective area growth; Distributed Bragg reflectors; Distributed feedback devices; Frequency; Holography; Laser tuning; Monolithic integrated circuits; Optical design; Optical fiber communication; Semiconductor lasers; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593338

Filename

593338