DocumentCode :
1259470
Title :
Measurement of the stimulated carrier lifetime in semiconductor optical amplifiers by four-wave mixing of polarized ASE noise
Author :
Hunziker, Guido ; Paiella, Roberto ; Vahala, Kerry J. ; Koren, Uzi
Author_Institution :
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Volume :
9
Issue :
7
fYear :
1997
fDate :
7/1/1997 12:00:00 AM
Firstpage :
907
Lastpage :
909
Abstract :
We present a simple experiment aimed at measuring the stimulated carrier lifetime in semiconductor optical amplifiers (SOA´s). The technique relies on polarization-resolved nearly degenerate four-wave mixing (FWM) of a laser source with an amplified spontaneous emission (ASE) noise source. The method can quickly characterize the bandwidth performance of active layers for application in a cross-gain or cross-phase wavelength converter.
Keywords :
carrier lifetime; laser noise; light polarisation; multiwave mixing; quantum well lasers; superradiance; SOA; active layers; amplified spontaneous emission noise source; bandwidth performance; cross-gain wavelength converter; cross-phase wavelength converter; four-wave mixing; laser source; polarization-resolved nearly degenerate four-wave mixing; polarized ASE noise; semiconductor optical amplifiers; stimulated carrier lifetime; Charge carrier lifetime; Four-wave mixing; Laser noise; Noise measurement; Optical noise; Optical polarization; Semiconductor device noise; Semiconductor lasers; Semiconductor optical amplifiers; Wavelength measurement;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.593343
Filename :
593343
Link To Document :
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