Normally on reflection-type two-wavelength quantum-well modulator with balanced cavity design

Author

Tsai, Chia-Ming ; Lee, Chien-Ping

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

928

Lastpage

930

Abstract

We have demonstrated a AlGaAs-AlAs DBR reflection-type two-wavelength modulator with a novel balanced cavity design. Simultaneous operations at wavelengths of around 860 and 896 nm have been achieved. By using such a new cavity design similar operating voltages have been obtained for both wavelengths. Under separate biasing voltages of 14.5 and 11 V on each quantum-well absorbing region, the maximum reflectivity changes were around 50%.

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; electro-optical modulation; electro-optical switches; gallium arsenide; optical communication equipment; optical resonators; reflectivity; semiconductor quantum wells; 11 V; 14.5 V; 860 nm; 896 nm; AlGaAs-AlAs DBR reflection-type two-wavelength modulator; balanced cavity design; cavity design; maximum reflectivity changes; operating voltages; quantum-well absorbing region; reflection-type two-wavelength modulator; reflection-type two-wavelength quantum-well modulator; separate biasing voltages; Distributed Bragg reflectors; Optical arrays; Optical interconnections; Optical reflection; Optical resonators; Quantum well devices; Quantum wells; Reflectivity; Stark effect; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593353

Filename

593353