Title :
Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz
Author :
Devaux, F. ; Ougazzaden, A. ; Huet, Fabrice ; Carre, M.
Author_Institution :
France Telecom, CNET, Bagneux, France
fDate :
7/1/1997 12:00:00 AM
Abstract :
We report on an InAsP-InGaP electroabsorption modulator at 1.3 μm integrated with a semiconductor amplifier. The fiber-to-fiber insertion gain reaches +10 dB. The 50-μm-long modulator section exhibits a bandwidth of 36 GHz and a -17-dB extinction ratio with 3-V drive voltage. The integrated amplifier produced an RF-link efficiency of -26 dB at 20 GHz without any external amplification.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium compounds; indium compounds; integrated optics; optical information processing; semiconductor lasers; 1.3 mum; 3 V; 40 GHz; 50 mum; InAsP-InGaP; InAsP-InGaP electroabsorption modulator; RF-link efficiency; drive voltage; extinction ratio; fiber-to-fiber insertion gain; integrated amplifier; lossless InAsP-InGaP modulator; modulator section; optical signal processing; radio signal optical conversion; semiconductor amplifier; Costs; Extinction ratio; Optical amplifiers; Optical fibers; Optical harmonic generation; Optical losses; Optical modulation; Radio frequency; Semiconductor optical amplifiers; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
