Frequency-domain demonstration of transit-time-limited, large-area InGaP-InP-InGaAs MSM photodetectors

Author

DeCorby, R.G. ; MacDonald, R. ; Sharma, Ritu ; Gouin, F. ; Noad, J. ; Puetz, N.

Author_Institution

Telecommun. Res. Lab., Edmonton, Alta., Canada

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

985

Lastpage

987

Abstract

We report transit-time-limited bandwidth (12 GHz at 12-V bias) for an InGaP-InP-InGaAs MSM photodetector with 2-μm finger spacing, (100-μm)² active area, and abrupt heterojunctions. The same device exhibits a very gradual rolloff up to 20 GHz, with an on/off isolation of greater than 40 dB across the measurement band. This is one of the first reports of transit-time-limited performance measured in the frequency domain for InGaAs-based MSM photodetectors, and these are the largest such devices reported to date. A pseudomorphic In/sub 0.8/Ga/sub 0.2/P cap layer is found to have an electrically stable free surface, requiring no special pre-treatment or passivation.

Keywords

III-V semiconductors; Schottky barriers; frequency response; frequency-domain analysis; gallium arsenide; gallium compounds; indium compounds; metal-semiconductor-metal structures; photodetectors; transit time devices; 12 V; 2 mum; 2 to 12 GHz; In/sub 0.8/Ga/sub 0.2/P; InGaP-InP-InGaAs; Schottky barrier height; abrupt heterojunctions; active area; electrically stable free surface; finger spacing; frequency domain measurement; frequency response; gradual rolloff; large-area InGaP-InP-InGaAs MSM photodetectors; on/off isolation; pseudomorphic In/sub 0.8/Ga/sub 0.2/P cap layer; transit-time-limited bandwidth; Bandwidth; Extraterrestrial measurements; Fingers; Frequency domain analysis; Heterojunctions; Indium phosphide; Optical materials; Optical mixing; Photodetectors; Probability distribution;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593374

Filename

593374