A Si bipolar 21-GHz/320-mW static frequency divider

Author

Kurisu, Masakazu ; Ohuchi, Masahiro ; Sawairi, Akihiro ; Sugiyama, Mitsuhiro ; Takemura, Hisashi ; Tashiro, Tsutomu

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

26

Issue

11

fYear

1991

fDate

11/1/1991 12:00:00 AM

Firstpage

1626

Lastpage

1631

Abstract

A silicon bipolar divide-by-eight static frequency divider was developed. A state-of-the-art advanced borosilicate-glass self-aligned (A-BSA) transistor technology that has a cutoff frequency of 40 GHz at V_ce=1 V was applied. Optimum circuit and layout designs were carried out for high-speed/low-power operation. The single-ended input realized by an on-chip metal-insulator-metal (MIM) capacitor makes it easy to use in microwave applications. Ultrahigh-speed operation, up to 21 GHz, was realized, with 320-mW power dissipation from a single +5-V supply. The static frequency divider is a suitable prescaler for phase-locked oscillators (PLOs), completely covering microwave frequencies from L band through Ku band (1-18 GHz)

Keywords

bipolar integrated circuits; digital integrated circuits; elemental semiconductors; frequency dividers; silicon; 0 to 21 GHz; 1 V; 320 mW; 40 GHz; 5 V; Ku band; L band; MIM capacitor; Si; borosilicate-glass; cutoff frequency; divide by eight divider; high-speed/low-power operation; layout designs; microwave frequencies; on-chip capacitor; phase-locked oscillators; power dissipation; prescaler; prescalers; self-aligned transistors; semiconductors; single +5-V supply; single-ended input; static frequency divider; Circuits; Cutoff frequency; Frequency conversion; MIM capacitors; Metal-insulator structures; Microwave frequencies; Microwave oscillators; Power dissipation; Silicon; Transistors;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.98982

Filename

98982