High speed InGaAs/InP p-i-n photodiodes fabricated on a semi-insulating substrate

Author

Crawford, D.L. ; Wey, Y.G. ; Mar, A. ; Bowqers, J.E. ; Hafich, M.J. ; Robinson, G.Y.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

Issue

9

fYear

1990

Firstpage

647

Lastpage

649

Abstract

High speed, mass-produced InGaAs-InP p-i-n photodiodes have been fabricated on a semi-insulating substrate. The FWHM (full width at half maximum) impulse response of a 25- mu m/sup 2/ device has been measured to be under 16 ps, entirely limited by the measurement system. The high speed of this structure was achieved by scaling the area down to 25 mu m/sup 2/ and the intrinsic layer thickness down to 0.3 mu m. Further scaling of this structure is possible, and bandwidths in excess of 200 GHz should be achievable. This structure is also useful for integration with bias tees, matching networks, and optical and electronic preamplifiers.<>

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; p-i-n diodes; photodiodes; 0.3 micron; 16 ps; 200 GHz; 5 micron; InGaAs-InP; bias tees; electronic preamplifiers; full width at half maximum; high-speed photodiodes; intrinsic layer thickness; matching networks; optical preamplifiers; p-i-n photodiodes; semi-insulating substrate; Bandwidth; Capacitance; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Joining processes; Optical fiber networks; PIN photodiodes; Pulse measurements; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.59338

Filename

59338