Title :
Ill conditioning in self-heating FET models
Author_Institution :
Appl. Wave Res. Inc., Long Beach, CA, USA
fDate :
3/1/2002 12:00:00 AM
Abstract :
This paper shows that the introduction of self heating effects into a FET model can cause severe ill conditioning in nonlinear circuit simulators. Depending on the parameter values of the model, the solutions can be indistinct, multiple, or even nonexistent. The result is poor convergence in nonlinear simulations using such models.
Keywords :
convergence of numerical methods; field effect transistors; semiconductor device models; FET model; convergence; ill-conditioning; nonlinear circuit simulation; self-heating; Circuit simulation; Equations; FETs; Heating; Nonlinear circuits; Solid modeling; Temperature; Thermal conductivity; Thermal resistance; Threshold voltage;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.989860
