Title :
Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices
Author :
Xu, Y.B. ; Freeland, D.J. ; Tselepi, M. ; Guertler, C.M. ; Lee, W.Y. ; Bland, J.A.C. ; Holmes, S.N. ; Patel, N.K. ; Ritchie, D.A.
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
fDate :
9/1/1999 12:00:00 AM
Abstract :
The interface magnetic and electronic properties of two Fe/III-V semiconductor systems, namely Fe/GaAs and Fe/InAs, grown at room temperature have been studied. A “magnetic interface”, which is essential for the fabrication of magneto-electronic (ME) devices, was realized in both Fe/GaAs and Fe/InAs systems with suitable substrate processing and growth conditions. Furthermore, Fe/InAs was shown to have favorable interface electronic properties as Fe forms a low resistance ohmic contact on InAs. Two prototypes of ME devices based on Fe/InAs are also discussed
Keywords :
III-V semiconductors; electron spin polarisation; ferromagnetic materials; field effect transistors; gallium arsenide; indium compounds; interface magnetism; iron; metallic epitaxial layers; molecular beam epitaxial growth; ohmic contacts; resonant tunnelling diodes; semiconductor epitaxial layers; semiconductor growth; semiconductor-metal boundaries; Fe-GaAs; Fe-InAs; Fe/III-V semiconductor systems; MBE; ferromagnetic/III-V semiconductor heterostructures; growth conditions; hysteresis loops; in-situ MOKE; interface electronic properties; interface magnetic properties; island growth; low resistance ohmic contact; magnetic interface; magneto-electronic devices; spin polarized FET; spin polarized RTD; spin-sensitive devices; substrate processing; ultrathin films; Contact resistance; Fabrication; Gallium arsenide; III-V semiconductor materials; Iron; Magnetic devices; Magnetic properties; Magnetic semiconductors; Substrates; Temperature;
Journal_Title :
Magnetics, IEEE Transactions on
