Two-Dimensional Analytical Drain Current Model for Double-Gate MOSFET Incorporating Dielectric Pocket

In this paper, a dielectric-pocket double-gate MOSFET is described for low-voltage low-power applications. A complete drain current model has been developed including the channel length modulation effect. The analytical results have been validated by comparing them with the simulation results using the ATLAS 3-D device simulator. This paper analyzes the impact of dielectric pillars on large-signal performance metrics in terms of linearity and digital performance. Due to high I_on/I_off ratio, device gain, and extremely low value of intrinsic delay and power dissipation, the proposed design is a suitable candidate for low-voltage low-power digital and analog applications.