Title :
Simple and Accurate Circuit Simulation Model for Gallium Nitride Power Transistors
Author :
Shah, Krushal ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
Abstract :
Simple and accurate circuit simulation model for gallium nitride (GaN) power field-effect transistors (FETs) is presented and validated in high-frequency low-voltage synchronous buck (SB) dc-dc power converters. For comparison, simulation results are also presented for the power converter based on silicon power metal-oxide semiconductor (MOS)FETs with similar voltage and current ratings. An improvement in power conversion efficiency of more than 4% is reported with GaN power FETs compared to the best commercially available silicon power MOSFETs in a 19 V/1.2 V, 7 W SB dc-dc power converter with excellent load regulation. A temperature- and frequency-dependent power inductor model is also reported and is shown to be necessary in order to accurately model the converter performance.
Keywords :
DC-DC power convertors; III-V semiconductors; circuit simulation; gallium compounds; low-power electronics; power conversion; power field effect transistors; power inductors; semiconductor device models; wide band gap semiconductors; GaN; circuit simulation model; converter performance model; frequency-dependent power inductor model; gallium nitride power transistors; high-frequency low-voltage SB dc-dc power converters; high-frequency low-voltage synchronous buck dc-dc power converters; load regulation; power FET; power conversion efhciency; power field effect transistors; temperature-dependent power inductor model; voltage 1.2 V; voltage 19 V; Capacitance; Gallium nitride; Integrated circuit modeling; MOSFETs; Power transistors; Semiconductor device modeling; Silicon; Circuit model; gallium nitride (GaN); high-frequency; power inductor; power metal-oxide semiconductor field-effect transistor (MOSFET); power transistor; synchronous buck converter;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2205691
