Title :
Design considerations of high-dynamic-range wide-band amplifiers in BiCMOS technology
Author :
Chang, Zhong-Yuan ; Sansen, Willy M C ; Steyaert, Michel S J
Author_Institution :
Dept. Elektrotech., Katholieke Univ., Leuven, Belgium
fDate :
11/1/1991 12:00:00 AM
Abstract :
Design techniques of high-dynamic-range wideband amplifiers in BiCMOS technology for matching either a telescope (capacitive) or a wire (resistive) antenna are presented. The advantage of the BiCMOS process over bipolar and CMOS ones in designing such high-performance amplifiers is theoretically studied. It is analytically shown that by optimal combination of bipolar and MOS devices, BiCMOS amplifiers can be designed that show superior performance over bipolar and CMOS realizations. The design principles were verified by measurements on a bipolar test amplifier implemented in a linear gate array of a BiCMOS technology. A total equivalent input noise level as low as 0.25 μV RMS within a 2.5-kHz IF band is achieved and a dynamic range of 135 dB was measured without the use of any automatic gain control
Keywords :
BIMOS integrated circuits; amplifiers; radiofrequency amplifiers; wideband amplifiers; BiCMOS amplifiers; BiCMOS process; BiCMOS technology; design principles; high dynamic range amplifiers; telescope antenna; total equivalent input noise level; wideband amplifiers; wire antenna; BiCMOS integrated circuits; Broadband amplifiers; Broadband antennas; CMOS process; CMOS technology; Optical design; Performance analysis; Space technology; Telescopes; Wire;
Journal_Title :
Solid-State Circuits, IEEE Journal of
