Design considerations of high-dynamic-range wide-band amplifiers in BiCMOS technology

Author

Chang, Zhong-Yuan ; Sansen, Willy M C ; Steyaert, Michel S J

Author_Institution

Dept. Elektrotech., Katholieke Univ., Leuven, Belgium

Volume

26

Issue

11

fYear

1991

fDate

11/1/1991 12:00:00 AM

Firstpage

1681

Lastpage

1688

Abstract

Design techniques of high-dynamic-range wideband amplifiers in BiCMOS technology for matching either a telescope (capacitive) or a wire (resistive) antenna are presented. The advantage of the BiCMOS process over bipolar and CMOS ones in designing such high-performance amplifiers is theoretically studied. It is analytically shown that by optimal combination of bipolar and MOS devices, BiCMOS amplifiers can be designed that show superior performance over bipolar and CMOS realizations. The design principles were verified by measurements on a bipolar test amplifier implemented in a linear gate array of a BiCMOS technology. A total equivalent input noise level as low as 0.25 μV _RMS within a 2.5-kHz IF band is achieved and a dynamic range of 135 dB was measured without the use of any automatic gain control

Keywords

BIMOS integrated circuits; amplifiers; radiofrequency amplifiers; wideband amplifiers; BiCMOS amplifiers; BiCMOS process; BiCMOS technology; design principles; high dynamic range amplifiers; telescope antenna; total equivalent input noise level; wideband amplifiers; wire antenna; BiCMOS integrated circuits; Broadband amplifiers; Broadband antennas; CMOS process; CMOS technology; Optical design; Performance analysis; Space technology; Telescopes; Wire;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.98990

Filename

98990