Title :
Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress
Author :
Yuan Liu ; Wei-Jing Wu ; Zhi-Feng Lei ; Lei Wang ; Qian Shi ; Yu-Rong Liu ; Yun-fei En ; Bin Li
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., China Electron. Produce Reliability & Environ. Testing Res. Inst., Guangzhou, China
Abstract :
The instability of indium zinc oxide thin film transistors (IZO TFTs) is investigated under transmission line pulsed (TLP) stress by applying repeated voltage pulses with different durations (50-200 ns) to the gate with grounded source and drain. Threshold voltage increases and then electron field effect mobility decreases after TLP stress. These results are due to electron trapping in the existing traps of gate oxide near the SiO2/IZO interface, which is verified by the subsequent annealing experiment. The instability behavior is also investigated by low-frequency noise measurements before and after TLP stress. Furthermore, influences of stress voltage and pulsewidth on the degradation effect of IZO TFT are discussed.
Keywords :
annealing; electron traps; indium compounds; noise measurement; silicon compounds; thin film transistors; transmission lines; zinc compounds; IZO TFT; SiO2-InZnO; TLP stress; annealing; electron field effect mobility; electron trapping; gate oxide; grounded drain; grounded source; indium zinc oxide thin film transistors; instability behavior; low-frequency noise measurements; repeated voltage pulses; stress voltage; threshold voltage; transmission line pulsed stress; Degradation; Electron traps; Electrostatic discharges; Indium compounds; Low-frequency noise; Stress; Thin film transistors; Threshold voltage; Indium zinc oxide (IZO); electrostatic discharge (ESD); low frequency noise (LFN); low frequency noise (LFN).; thin film transistor (TFT); transmission line pulse (TLP);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2362526
