Impact of ZnO Polarization on the Characteristics of Metal–Ferroelectric–ZnO Field Effect Transistor

A model has been developed to address polarization interaction between the ZnO and the ferroelectrics in metal-ferroelectric-ZnO field-effect transistors (MFZFETs). The C-V, I-V, and retention characteristics of MFZFETs and conventional metal-ferroelectric-Si field-effect transistors (MFSFETs) are comparatively studied by using the semiconductor transport theory with inclusion of the polarization model. Results revealed that MFZFETs demonstrate wider memory window, larger on-state drain current, and better retention characteristics, compared with MFSFETs because of the involvement of the polarization effect in ZnO.