• DocumentCode
    1260469
  • Title

    The early history of the high electron mobility transistor (HEMT)

  • Author

    Mimura, Takashi

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    50
  • Issue
    3
  • fYear
    2002
  • fDate
    3/1/2002 12:00:00 AM
  • Firstpage
    780
  • Lastpage
    782
  • Abstract
    The early history of the high electron mobility transistor illustrates the way in which a new device idea occurs and is developed towards commercialization. The events which took place in our laboratory are described in this paper
  • Keywords
    HEMT integrated circuits; cryogenic electronics; high electron mobility transistors; microwave amplifiers; microwave field effect transistors; product development; HEMT; HEMT IC; cryogenic low-noise amplifier; depletion-mode HEMT; device commercialization; device development; enhancement-mode HEMT; high electron mobility transistor; inverted HEMT; Electrons; Gallium arsenide; HEMTs; Heterojunctions; History; MESFETs; MODFETs; Photonic band gap; Potential well; Superlattices;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.989961
  • Filename
    989961
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1260469