Title :
Low-noise amplifiers-then and now
Author :
Whelehan, James J.
Author_Institution :
JJW Consulting Inc., Hatfield, UK
fDate :
3/1/2002 12:00:00 AM
Abstract :
The evolution in the performance of low-noise amplifiers (LNAs) has been dynamic over the past years. From the early LNAs that were complex, large, and heavy, to the present day InP high electron-mobility transistors that have virtually transformed the industry by their performance and extension into frequency bands that were not even considered in the past. This paper summarizes the transformation that has occurred in the LNA field, viewing where they were in the past, and where they are now
Keywords :
MMIC amplifiers; high electron mobility transistors; integrated circuit noise; masers; microwave field effect transistors; microwave parametric amplifiers; millimetre wave amplifiers; FETs; InP; InP high electron-mobility transistors; LNA performance; LNAs; frequency bands; low-noise amplifiers; masers; microwave region; millimeter-wave region; parametric amplifiers; FETs; Frequency; HEMTs; Indium phosphide; Low-noise amplifiers; MODFETs; Masers; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
