DocumentCode :
1260505
Title :
Exchange coupling in MBE grown MnPt/NiFe bilayers
Author :
Shimoyama, K. ; Kato, T. ; Iwata, S. ; Tsunashima, S.
Author_Institution :
Dept. of Electron., Nagoya Univ., Japan
Volume :
35
Issue :
5
fYear :
1999
Firstpage :
3922
Lastpage :
3924
Abstract :
Exchange anisotropy in MnPt(30 nm)/NiFe(5 nm) bilayers was investigated for films grown by the MBE method on MgO(001) and SrTi03(001) substrates, During the deposition, a static magnetic field of 100 Oe was applied in the film plane. In-situ reflection high-energy electron diffraction observations and ex-situ X-ray diffraction measurements revealed that the MnPt layers have chemical order and have (100) orientation which is an uncompensated plane of antiferromagnetic spin alignment. The bilayers whose MnPt layer was grown on NiFe layer were found to have an exchange anisotropy field (Hex) of 220 Oe (corresponding exchange anisotropy energy of J = 0.084 erg/cm2c) of 43 Oe, while the bilayers whose NiFe layer was grown on MnPt layer show very small Hex and a large Hc.
Keywords :
X-ray diffraction; antiferromagnetic materials; exchange interactions (electron); iron alloys; magnetic anisotropy; magnetic epitaxial layers; magnetic multilayers; manganese alloys; molecular beam epitaxial growth; nickel alloys; platinum alloys; reflection high energy electron diffraction; spin valves; (100) orientation; 30 nm; 5 nm; MBE grown MnPt/NiFe bilayers; MgO; MnPt; NiFe; SrTiO/sub 3/; antiferromagnetic spin alignment; chemical order; ex-situ X-ray diffraction; exchange anisotropy; exchange coupling; in-situ reflection high-energy electron diffraction; low coercivity; spin valve; static magnetic field; Anisotropic magnetoresistance; Chemicals; Electrons; Magnetic field measurement; Magnetic films; Molecular beam epitaxial growth; Optical films; Reflection; Substrates; X-ray diffraction;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.800709
Filename :
800709
Link To Document :
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