DocumentCode :
126066
Title :
A large bandwidth differential cascode amplifier cell in InP DHBT for 100-Gb/s analog equalizer applications
Author :
Mettetal, Ronan ; Dupuy, Jean-Yves ; Konczykowska, Agnieszka ; Jorge, Filipe ; Riet, M. ; Nodjiadjim, V. ; Ouslimani, A. ; Godin, J.
Author_Institution :
ECS-Lab., ENSEA, Cergy-Pontoise, France
fYear :
2014
fDate :
16-23 Aug. 2014
Firstpage :
1
Lastpage :
4
Abstract :
This paper reports the design, simulations and measurements of a differential cascode amplifier cell in InP DHBT. From transistor with fT/fmax reaching 370/340 GHz, this circuit is able to provide a bandwidth of more than 110 GHz, with a maximal differential gain of 9 dB at 90 GHz, and a total peaking of 11dB. This circuit constitutes a promising building block for analog equalizer structures dedicated to 100-Gb/s optical communication systems.
Keywords :
III-V semiconductors; differential amplifiers; equalisers; heterojunction bipolar transistors; indium; optical communication; InP; InP DHBT; analog equalizer applications; analog equalizer structures; bit rate 100 Gbit/s; building block; differential cascode amplifier cell; frequency 340 GHz; frequency 370 GHz; frequency 90 GHz; optical communication systems; Bandwidth; DH-HEMTs; Electronic mail; Equalizers; Indium phosphide; Integrated circuit interconnections;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
General Assembly and Scientific Symposium (URSI GASS), 2014 XXXIth URSI
Conference_Location :
Beijing
Type :
conf
DOI :
10.1109/URSIGASS.2014.6929431
Filename :
6929431
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=126066
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