Title :
Multigigabit/s 1.5 mu m lambda /4-shifted DFB OEIC transmitter and its use in transmission experiments
Author :
Lo, Y.H. ; Grabbe, P. ; Iqbal, M.Z. ; Bhat, R. ; Gimlett, J.L. ; Young, J.C. ; Lin, P.S.D. ; Gozdz, A.S. ; Koza, M.A. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Optoelectronic integrated circuit (OEIC) transmitters consisting of 1.5 mu m lambda /4-shifted distributed feedback (DFB) lasers and InGaAs-InAlAs MODFETs were fabricated for the first time. The entire processing requires only two organometallic vapor-phase epitaxy (OMVPE) growths, with the potential for high yield and low cost. Direct modulation of the OEIC transmitter is demonstrated for bit rates up to 10 Gb/s. A transmission experiment using the OEIC transmitter and a hybrid p-i-n/HEMT receiver is conducted at 5 Gb/s, with a sensitivity of -20 dBm and a bit-rate-distance product of 145 Gb/s-km.<>
Keywords :
distributed feedback lasers; field effect transistors; integrated optoelectronics; optical communication equipment; semiconductor growth; transmitters; vapour phase epitaxial growth; 1.5 micron; 10 Gbit/s; 5 Gbit/s; DFB OEIC transmitter; DFB lasers; InGaAs-InAlAs; MODFET; bit rates; bit-rate-distance product; hybrid p-i-n/HEMT receiver; lambda /4-shifted distributed feedback; optoelectronic integrated circuit transmitters; organometallic vapor-phase epitaxy; sensitivity; transmission experiments; Bit rate; Costs; Distributed feedback devices; Epitaxial growth; Integrated circuit yield; Laser feedback; MODFET circuits; MODFET integrated circuits; Optoelectronic devices; Transmitters;
Journal_Title :
Photonics Technology Letters, IEEE
