The Poly-SiC MSM Photodiode on Ceramic SiC Substrate for Low-Cost Ultraviolet Light Sensing Applications

Pseudo 6H poly-SiC (P6H-SiC) films are deposited on the pressureless-sintering ceramic SiC substrate by rapid thermal chemical vapor deposition technology to develop metal-semiconductor-metal (MSM) photodetectors (PD) for low-cost and high-performance ultraviolet (UV) detecting applications. The sensing performances of the Au/P6H-SiC/ceramic-SiC MSM PD were examined by measurement of photo and dark currents with and without the irradiation of 366 and 254 nm UV lights. At room temperature/250°C, the photo/dark current ratio of the P6H-SiC MSM PD is ~ 20.66/8.98, respectively, under irradiation of UV light, which are higher than that of ~ 4.88/0.22 for the polycrystalline β-SiC MSM PD on silicon substrate.