Title :
The Poly-SiC MSM Photodiode on Ceramic SiC Substrate for Low-Cost Ultraviolet Light Sensing Applications
Author :
Juang, Feng-Renn ; Fang, Yean-Kuen ; Chiang, Yen-Ting ; Wei, Tzu-Chieh ; Lin, Bor-Wen
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Pseudo 6H poly-SiC (P6H-SiC) films are deposited on the pressureless-sintering ceramic SiC substrate by rapid thermal chemical vapor deposition technology to develop metal-semiconductor-metal (MSM) photodetectors (PD) for low-cost and high-performance ultraviolet (UV) detecting applications. The sensing performances of the Au/P6H-SiC/ceramic-SiC MSM PD were examined by measurement of photo and dark currents with and without the irradiation of 366 and 254 nm UV lights. At room temperature/250°C, the photo/dark current ratio of the P6H-SiC MSM PD is ~ 20.66/8.98, respectively, under irradiation of UV light, which are higher than that of ~ 4.88/0.22 for the polycrystalline β-SiC MSM PD on silicon substrate.
Keywords :
chemical vapour deposition; metal-semiconductor-metal structures; optical sensors; photodetectors; photodiodes; polymers; silicon compounds; ultraviolet detectors; wide band gap semiconductors; MSM PD; SiC; UV light irradiation; dark current measurement; high-performance ultraviolet detecting applications; low-cost ultraviolet light sensing applications; metal-semiconductor-metal photodetectors; photo current measurement; pressureless-sintering ceramic substrate; rapid thermal chemical vapor deposition technology; temperature 250 degC; temperature 293 K to 298 K; CMOS integrated circuits; Ceramics; Dark current; Silicon carbide; Substrates; Temperature measurement; Ultraviolet sources; Ceramic SiC; P6H-SiC; metal-semiconductor-metal (MSM); photo/dark current ratio (PDCR); ultraviolet (UV) detector;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2011.2160848
