Comprehensive Microscopic Analysis of Laser-Induced High Doping Regions in Silicon

Microscopic laser-doped regions in advanced solar cell concepts are analyzed to determine the doping density and to identify the damage caused by the laser process. For these investigations, microphotoluminescence spectroscopy and micro-Raman spectroscopy are utilized to measure doping density, internal stress, and carrier lifetime with micrometer resolution. This analysis proves the high applicability of the microspectroscopic techniques for the characterization of laser-doped regions by analyzing the profile of the advanced local doping process and the laser-induced damage particularly at the edges of the highly doped regions.