Title :
70 nm gate-length THz InP-based In0.7Ga0.3As/In0.52Al0.48As HEMT with fmax of 540GHz
Author :
Lisen Zhang ; Zhihong Feng ; Dong Xing ; Shixiong Liang ; Junlong Wang ; Guodong Gu ; Yuangang Wang ; Peng Xu
Author_Institution :
Nat. Key Lab. of Applic. Specific Integrated Circuit, Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
A 70 nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2×20μm and source-drain space of 2 μm. The T-shaped gate with a stem height of 200nm is fabricated to minimize parasitic capacitance. The fabricated devices exhibited a maximum drain current density of 720 mA/mm (VGS=0.2V) and a maximum peak extrinsic-transconductance of 1600 mS/mm. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 310 and 540 GHz, respectively. The HEMTs are promising for use in THz-wave integrated circuits.
Keywords :
III-V semiconductors; current density; gallium arsenide; high electron mobility transistors; indium compounds; submillimetre wave transistors; terahertz wave devices; InP-In0.7Ga0.3As-In0.52Al0.48As; T-shaped gate; THz HEMT; THz-wave integrated circuits; current gain extrinsic cutoff frequency; high electron mobility transistor; maximum drain current density; maximum oscillation frequency; maximum peak extrinsic-transconductance; parasitic capacitance; size 70 nm; source-drain space; voltage 0.2 V; Current measurement; Cutoff frequency; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; Performance evaluation;
Conference_Titel :
General Assembly and Scientific Symposium (URSI GASS), 2014 XXXIth URSI
Conference_Location :
Beijing
DOI :
10.1109/URSIGASS.2014.6929455
