DocumentCode
1261005
Title
Modeling the I-V Curves and Its Derivatives of Microwave Transistors Using Neural Networks
Author
Landa, Andrés Zárate-de ; Roblin, Patrick ; Reynoso-Hernández, J.A. ; Loo-Yau, J.R.
Author_Institution
Centro de Investig. Cienc. y Educ. Super. de Ensenada, Ensenada, Mexico
Volume
22
Issue
9
fYear
2012
Firstpage
468
Lastpage
470
Abstract
Artificial neural networks are used as a tool in the development of reliable models for field effect transistors. This letter presents an improvement of the classical backpropagation algorithm allowing for the training process information contained in the first derivatives of Ids with respect to the control voltages Vgs and Vds. Excellent agreement between measured and simulated data is achieved up to the third order derivative of Ids .
Keywords
backpropagation; electronic engineering computing; microwave field effect transistors; neural nets; semiconductor device models; I-V curve modelling; artificial neural networks; backpropagation algorithm; control voltages; microwave field effect transistors; third order derivative; training process information; Artificial neural networks; Biological neural networks; Microwave FETs; Neurons; Training; Artificial neural networks (ANNs); field effect transistor (FET) I-V modeling; training algorithms;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2012.2210866
Filename
6263253
Link To Document