• DocumentCode
    1261005
  • Title

    Modeling the I-V Curves and Its Derivatives of Microwave Transistors Using Neural Networks

  • Author

    Landa, Andrés Zárate-de ; Roblin, Patrick ; Reynoso-Hernández, J.A. ; Loo-Yau, J.R.

  • Author_Institution
    Centro de Investig. Cienc. y Educ. Super. de Ensenada, Ensenada, Mexico
  • Volume
    22
  • Issue
    9
  • fYear
    2012
  • Firstpage
    468
  • Lastpage
    470
  • Abstract
    Artificial neural networks are used as a tool in the development of reliable models for field effect transistors. This letter presents an improvement of the classical backpropagation algorithm allowing for the training process information contained in the first derivatives of Ids with respect to the control voltages Vgs and Vds. Excellent agreement between measured and simulated data is achieved up to the third order derivative of Ids .
  • Keywords
    backpropagation; electronic engineering computing; microwave field effect transistors; neural nets; semiconductor device models; I-V curve modelling; artificial neural networks; backpropagation algorithm; control voltages; microwave field effect transistors; third order derivative; training process information; Artificial neural networks; Biological neural networks; Microwave FETs; Neurons; Training; Artificial neural networks (ANNs); field effect transistor (FET) I-V modeling; training algorithms;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2012.2210866
  • Filename
    6263253