Integration of 1.3- $\mu{\rm m}$ Quantum-Dot Lasers With ${\rm Si}_{3}{\rm N}_{4}$ Waveguide

A single mode photonic integrated circuit, consisting of a monolithically integrated quantum-dot laser and a suitably designed ${\rm Si}_{3}{\rm N}_{4}$ waveguide, is demonstrated. The 1.3- $\mu{\rm m}$ quantum-dot laser incorporates a superlattice barrier, p-doping, and tunnel injection in the active region, demonstrating operation up to 85 $^{\circ}{\rm C}$ with excellent temperature stability (high ${\rm T}_{0}$ ). The two devices are optimally groove coupled to minimize the losses. Integration of the tapered waveguide with a quantum-dot cross laser is also demonstrated.