DocumentCode :
126108
Title :
MEMS — BiCMOS monolithic integration
Author :
Kaynak, Mehmet ; Wietstruck, M. ; Kaynak, Canan Baristiran ; Goritz, Alexander ; Tolunay, Selin ; Tillack, Bernd
Author_Institution :
IHP, Frankfurt (Oder), Germany
fYear :
2014
fDate :
16-23 Aug. 2014
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents various RF-MEMS technologies and devices integrated to a standard BiCMOS process. SiGe BiCMOS technology acts as the baseline process for the integration of modules increasing the functionality and by this way enlarging the spectrum for embedded system applications. Back-end-off-line (BEOL) integrated RF-MEMS switches for mm-wave applications, through silicon vias (TSVs) for RF-grounding and 3D integration and a fully BiCMOS integrated microchannel technology for microfluidic applications are discussed. This paper covers the aspects of both technology challenges and performances figures.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; microfluidics; microswitches; semiconductor materials; three-dimensional integrated circuits; 3D integration; BiCMOS monolithic integration; RF-MEMS technologies; RF-grounding; SiGe; SiGe BiCMOS technology; back-end-off-line; embedded system applications; fully BiCMOS integrated microchannel technology; microfluidic applications; mm-wave applications; through silicon vias; BiCMOS integrated circuits; Detectors; Frequency measurement; Metals; Microfluidics; Silicon; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
General Assembly and Scientific Symposium (URSI GASS), 2014 XXXIth URSI
Conference_Location :
Beijing
Type :
conf
DOI :
10.1109/URSIGASS.2014.6929473
Filename :
6929473
Link To Document :
بازگشت