MEMS — BiCMOS monolithic integration

Author

Kaynak, Mehmet ; Wietstruck, M. ; Kaynak, Canan Baristiran ; Goritz, Alexander ; Tolunay, Selin ; Tillack, Bernd

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2014

fDate

16-23 Aug. 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents various RF-MEMS technologies and devices integrated to a standard BiCMOS process. SiGe BiCMOS technology acts as the baseline process for the integration of modules increasing the functionality and by this way enlarging the spectrum for embedded system applications. Back-end-off-line (BEOL) integrated RF-MEMS switches for mm-wave applications, through silicon vias (TSVs) for RF-grounding and 3D integration and a fully BiCMOS integrated microchannel technology for microfluidic applications are discussed. This paper covers the aspects of both technology challenges and performances figures.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microfluidics; microswitches; semiconductor materials; three-dimensional integrated circuits; 3D integration; BiCMOS monolithic integration; RF-MEMS technologies; RF-grounding; SiGe; SiGe BiCMOS technology; back-end-off-line; embedded system applications; fully BiCMOS integrated microchannel technology; microfluidic applications; mm-wave applications; through silicon vias; BiCMOS integrated circuits; Detectors; Frequency measurement; Metals; Microfluidics; Silicon; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

General Assembly and Scientific Symposium (URSI GASS), 2014 XXXIth URSI

Conference_Location

Beijing

Type

conf

DOI

10.1109/URSIGASS.2014.6929473

Filename

6929473