DocumentCode
1261201
Title
80°C continuous wave operation of AlGaInP based visible VCSEL
Author
Calvert, T. ; Corbett, B. ; Lambkin, J.D.
Author_Institution
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Volume
38
Issue
5
fYear
2002
fDate
2/28/2002 12:00:00 AM
Firstpage
222
Lastpage
223
Abstract
Singlemode operation of an oxide confined vertical cavity surface emitting laser operating continuous wave around 670 nm up to a heatsink temperature of 80°C is presented. Heatsinking of this device was improved by thinning the GaAs substrate and bonding to a TO-46 header with indium
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; heat sinks; indium compounds; laser modes; semiconductor lasers; surface emitting lasers; 670 nm; 80 C; AlGaInP; AlGaInP visible VCSEL; GaAs; GaAs substrate thinning; In; TO-46 header; continuous wave operation; heat sink; indium bonding; oxide confined vertical cavity surface emitting laser; single-mode operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020150
Filename
990207
Link To Document