Improving contact performances of Al(Al/Pd) and i-a-SiGe:H interface using an additional very thin Sb layer

Author

Lin, Cha-Shin ; Yeh, Rong-Hwei ; Li, Inn-Xin ; Hong, Jyh-Wong

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan

Volume

38

Issue

5

fYear

2002

fDate

2/28/2002 12:00:00 AM

Firstpage

253

Lastpage

255

Abstract

A very thin Sb layer, which is an n-type dopant for i-a-SiGe:H and was inserted between the Al or Al/Pd and i-a-SiGe:H layers, was successfully employed to reduce the specific contact resistance (R_sc) of these two interfaces. The R_sc of the Al(Al/Pd) and i-a-SiGe:H interface could be reduced from 4.42 (6.23×10²) Ω-cm² to 5×10^-3 (4×10^-3) Ω-cm² by inserting a very thin Sb layer and using a proper low-temperature (<300°C) annealing process. Experimental results indicated that these two proposed interfaces could be used to enhance the current drivability of a Schottky barrier a-SiGe thin-film transistor

Keywords

Ge-Si alloys; Schottky barriers; aluminium; amorphous semiconductors; annealing; antimony; contact resistance; hydrogen; palladium; thin film transistors; 0 to 300 degC; Al-Pd-Sb-SiGe:H; Al-Sb-SiGe:H; Al/Pd-Sb-SiGe:H; Schottky barrier; contact performances; current drivability; low-temperature annealing process; n-type dopant; specific contact resistance; thin-film transistor;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020157

Filename

990228