DocumentCode :
1261372
Title :
Dual layer overcoat for MR recording media
Author :
Chen, Ga-Lane ; Wu, Junhua ; Weiss, Joel
Author_Institution :
Seagate Magnetics, Fremont, CA, USA
Volume :
35
Issue :
5
fYear :
1999
fDate :
9/1/1999 12:00:00 AM
Firstpage :
2364
Lastpage :
2366
Abstract :
To achieve high recording areal density, the magnetic spacing loss between the recording head and the disk must be reduced. GMR media require an ultra thin overcoat. Conventional a-C:H and a-C:N media crashed easily as the thickness of overcoat was reduced to less than 75 Å. Ion beam deposited carbon may have better wear resistance but has issues affecting defects and magnetic performance. We have developed a dual layer overcoat for MR and GMR media. With SiNx as the foundation layer and a-C:H as the top layer of the overcoat, we are able to obtain good tribology performance. The peak position of FTIR spectra of SiNx films increases from 824.76 to 1140.54 cm-1 as the ratio of nitrogen to argon increases from 0/80 to 100/80. The binding energy of Si in SiNx increases from 100.4 eV to 102.2 eV as the nitrogen/argon ratio increases from 20/80 to 100/80. The reduced elastic modulus, Er, of SiNx films is a function of flow ratio of argon to nitrogen. Er value of silicon nitride film can reach 229 GPa for the nitrogen/argon ratio at 20/80
Keywords :
Fourier transform spectra; carbon; elastic moduli; giant magnetoresistance; hydrogen; infrared spectra; magnetic recording; magnetoresistive devices; protective coatings; silicon compounds; stiction; wear resistance; C:H-SiN; FTIR spectra; dual layer overcoat; elastic modulus; giant magnetoresistive media; magnetic spacing loss; magnetoresistive recording media; nitrogen/argon ratio; overcoat thickness; recording areal density; tribology; wear resistance; Argon; Computer crashes; Disk recording; Ion beams; Magnetic heads; Magnetic losses; Magnetic recording; Nitrogen; Silicon compounds; Tribology;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.800826
Filename :
800826
Link To Document :
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