Title :
Characteristics of top-surface-emitting GaAs quantum-well lasers
Author :
Lee, Y.H. ; Tell, B. ; Brown-Goebeler, K. ; Jewell, J.L. ; Burrus, C.A. ; Hove, J.M.V.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
Self-aligned top-surface-emitting vertical-cavity GaAs four-quantum-well lasers emitting at 850 nm with good room temperature CW characteristics are discussed. Deep buried damaged layers by proton implantation are used to control vertical conductivity profiles for efficient current injection at the active region. Minimum CW threshold is 1.8 mA. Maximum CW output power is 1.5 mW. Laser linewidth of 0.02 AA is measured using a scanning Fabry-Perot etalon. For all sizes of lasers, the full angle beam divergences of fundamental transverse modes are twice as large as those calculated from a diffraction formula using aperture diameters.<>
Keywords :
III-V semiconductors; deep levels; gallium arsenide; ion implantation; laser cavity resonators; semiconductor doping; semiconductor laser arrays; 1.5 mW; 1.8 mA; 850 nm; CW threshold; GaAs; active region; aperture diameters; buried damaged layers; continuous wave lasing; current injection; deep layer doping; diffraction formula; full angle beam divergences; fundamental transverse modes; good room temperature CW characteristics; laser linewidth; proton implantation; scanning Fabry-Perot etalon; top-surface-emitting vertical-cavity GaAs four-quantum-well lasers; vertical conductivity profiles; Conductivity; Fabry-Perot; Gallium arsenide; Laser beams; Laser modes; Power generation; Protons; Quantum well lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
