Title :
Energy-Efficient Hybrid Silicon Electroabsorption Modulator for 40-Gb/s 1-V Uncooled Operation
Author :
Tang, Yongbo ; Peters, Jonathan D. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
This letter demonstrates a high-speed and energy-efficient lumped electroabsorption modulator on the hybrid silicon platform for an uncooled operation at up to 80°C . This 100-μm-long modulator has a 3-dB bandwidth of 30 GHz. Eye diagrams measured at the temperatures of 20°C , 40°C, 60 °C, and 80°C with corresponding adjustment on the input wavelength and the bias voltage show a dynamic extinction ratio of around 5 dB at 40 Gb/s with a 1-V drive voltage swing and an energy consumption of 112 fJ/bit.
Keywords :
electro-optical modulation; electroabsorption; energy consumption; extinction coefficients; integrated optics; silicon-on-insulator; Si; bias voltage; bit rate 40 Gbit/s; drive voltage swing; dynamic extinction ratio; energy consumption; eye diagrams; high-speed energy-efficient hybrid silicon electroabsorption modulator; hybrid silicon platform; size 100 mum; temperature 20 degC to 80 degC; uncooled operation; Energy consumption; Modulation; Optical attenuators; Semiconductor device measurement; Silicon; Temperature measurement; Voltage measurement; Electroabsorption; integrated optics; silicon-on-insulator (SOI); waveguide modulator;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2212702
