Title :
Comments on ´Early voltage in very-narrow-base bipolar transistors´ by D.J. Roulston
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
An improved Early voltage V/sub A/ model for an n/sup +//p/n bipolar transistor derived by D.J. Roulston (see ibid., vol.11, no.2, p.88-9, 1990) is shown to be less accurate, and a new voltage model is derived.<>
Keywords :
bipolar transistors; semiconductor device models; Early voltage; model; n/sup +//p/n bipolar transistor; very-narrow-base bipolar transistors; voltage model; Bipolar transistors; Current density; Current-voltage characteristics; Electron devices; Electron emission; Photonic band gap; Predictive models; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
