DocumentCode :
1261968
Title :
Micro-track profiles of ESD damaged AMR and GMR heads
Author :
Jang, Eun Kyu ; Kim, Weon Woo ; Kao, Andrew S. ; Lee, Hyung J.
Author_Institution :
Samsung Inf. Syst. America, San Jose, CA, USA
Volume :
35
Issue :
5
fYear :
1999
fDate :
9/1/1999 12:00:00 AM
Firstpage :
2616
Lastpage :
2618
Abstract :
We systematically studied the micro-track profiles of ESD damaged AMR and spin valve GMR heads, and correlated these with the dynamic electric performances of each head. Spin valve GMR heads and two types of AMR heads made by different structure and material are ESD (HBM) stressed and studied. We observed a double peak in micro-track profile after more than 10% change of MR resistance. This means that the centers of AMR and GMR sensors become less sensitive before the total melting of MR element during ESD zapping. We also observed double peak micro-track profile after pin reversal of SV head. We attribute this to changes in the domain configuration caused by partial reversal of pinned layer moment along MR (GMR) stripe
Keywords :
electrostatic discharge; giant magnetoresistance; magnetic anisotropy; magnetic domains; magnetic heads; magnetoresistive devices; spin valves; AMR heads; ESD damaged heads; GMR heads; domain configuration; dynamic electric performances; melting; micro-track profiles; partial reversal; pin reversal; pinned layer moment; spin valve; Anisotropic magnetoresistance; Electrostatic discharge; Giant magnetoresistance; Magnetic anisotropy; Magnetic heads; Optical microscopy; Scanning electron microscopy; Spin valves; Testing; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.800912
Filename :
800912
Link To Document :
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