Micro-track profiles of ESD damaged AMR and GMR heads

Author

Jang, Eun Kyu ; Kim, Weon Woo ; Kao, Andrew S. ; Lee, Hyung J.

Author_Institution

Samsung Inf. Syst. America, San Jose, CA, USA

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2616

Lastpage

2618

Abstract

We systematically studied the micro-track profiles of ESD damaged AMR and spin valve GMR heads, and correlated these with the dynamic electric performances of each head. Spin valve GMR heads and two types of AMR heads made by different structure and material are ESD (HBM) stressed and studied. We observed a double peak in micro-track profile after more than 10% change of MR resistance. This means that the centers of AMR and GMR sensors become less sensitive before the total melting of MR element during ESD zapping. We also observed double peak micro-track profile after pin reversal of SV head. We attribute this to changes in the domain configuration caused by partial reversal of pinned layer moment along MR (GMR) stripe

Keywords

electrostatic discharge; giant magnetoresistance; magnetic anisotropy; magnetic domains; magnetic heads; magnetoresistive devices; spin valves; AMR heads; ESD damaged heads; GMR heads; domain configuration; dynamic electric performances; melting; micro-track profiles; partial reversal; pin reversal; pinned layer moment; spin valve; Anisotropic magnetoresistance; Electrostatic discharge; Giant magnetoresistance; Magnetic anisotropy; Magnetic heads; Optical microscopy; Scanning electron microscopy; Spin valves; Testing; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800912

Filename

800912