Development of GaN wide bandgap technology for microwave power applications

Author

Nuttinck, S. ; Gebara, E. ; Laskar, J. ; Harris, M.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

Volume

3

Issue

1

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

80

Lastpage

87

Abstract

A complete investigation of GaN-based wide-bandgap electronic devices and circuits has been presented. It includes an understanding of the device technology (e.g. characterization systems, testing, and modeling), of the devices´ reliability (e.g. fabrication, thermal analysis), and the development of circuits and system applications, including radar and digital communication systems

Keywords

III-V semiconductors; digital communication; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power transistors; radar equipment; semiconductor device models; semiconductor device reliability; semiconductor device testing; semiconductor technology; thermal analysis; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMTs; GaN; GaN wide bandgap technology; RF power characterization; characterization systems; device reliability; device technology; digital communication systems; floating-body effects; microwave power applications; modeling; radar; self-heating effects; testing; thermal analysis; Circuit testing; Circuits and systems; Fabrication; Gallium nitride; Microwave devices; Microwave technology; Photonic band gap; Power system modeling; Power system reliability; System testing;

fLanguage

English

Journal_Title

Microwave Magazine, IEEE

Publisher

ieee

ISSN

1527-3342

Type

jour

DOI

10.1109/6668.990699

Filename

990699