Title :
Low-Power-Consumption High-Eye-Margin 10-Gb/s Operation by GaInAsP/InP Distributed Reflector Lasers With Wirelike Active Regions
Author :
Lee, SeungHun ; Takahashi, Daisuke ; Shindo, Takahiko ; Shinno, Keisuke ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Low-driving-current and high-eye-margin 10-Gb/s operation was demonstrated by a GaInAsP/InP distributed reflector (DR) laser with wirelike active regions. The reduction of modulation bias currents was realized by the high modulation efficiency of five-stack quantum wirelike active regions as well as thin optical confinement layers for a shorter carrier transit time. A mask test of 10 GbE with 20% margin was passed with a low bias current of 10 mA, and the maximum 3-dB bandwidth was over 15 GHz.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; power consumption; quantum optics; semiconductor lasers; GaInAsP-InP; GaInAsP/InP distributed reflector lasers; bit rate 10 Gbit/s; five-stack quantum wirelike active regions; high-eye-margin operation; low power consumption; low-driving-current; modulation bias currents; thin optical confinement layers; Distributed feedback devices; High speed optical techniques; Laser feedback; Modulation; Vertical cavity surface emitting lasers; Distributed reflector (DR) laser; high-speed modulation; low-power consumption; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2160938
