Title :
Crystallization of amorphous precursor of Ba-ferrite film: a real-time synchrotron X-ray scattering study
Author :
Cho, Tae Sik ; Doh, Seok Joo ; Je, Jung Ho ; Noh, Do Young ; Moon, Tak Jean
Author_Institution :
Dept. of Mater. Sci. & Eng., POSTECH, Pohang, South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
The crystallization of the amorphous precursor of a Ba-ferrite thin film was studied in real-time synchrotron x-ray scattering experiments. We found that a very thin (~50 Å) epitaxial Fe3 O4 sublayer was formed in the as-deposited amorphous precursor grown on sapphire (001). The nucleation of crystalline α-Fe2O3 phase from the amorphous precursor started at 300°C and continued at higher annealing temperatures. The mosaic distribution of the α-Fe2O3 grains was about 0.67° full-width at half-maximum (FWHM), relatively large compared to that of the Fe3O4 sublayer. The crystalization of the Ba-ferrite phase occurred at 600°C. The Fe3O4 sublayer was transformed from 600°C to extremely well-aligned (0.05° FWHM) α-Fe2O3 phase. It is noteworthy that the crystallization of the Ba-ferrite phase occurred duping the transformation of the Fe3O4 sublayer to the well-aligned α-F2 O3 grains. The Fe3O4 sublayer might play an important role in the crystallization of amorphous Ba-ferrite film
Keywords :
X-ray scattering; annealing; barium compounds; crystallisation; ferrites; magnetic thin films; mosaic structure; nucleation; 300 to 600 C; Ba ferrite thin film; BaFe12O19; Fe3O4 epitaxial sublayer; amorphous precursor; annealing; crystallization; mosaic grain distribution; nucleation; real-time synchrotron X-ray scattering; Amorphous materials; Annealing; Crystallization; Ferrite films; Materials science and technology; Optical films; Substrates; Synchrotrons; Temperature; X-ray scattering;
Journal_Title :
Magnetics, IEEE Transactions on
