Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures

Author

Boeve, Hans ; Bruynseraede, Christophe ; Das, Jo ; Dessein, Kristof ; Borghs, Gustaaf ; De Boeck, Jo ; Sousa, Ricardo C. ; Melo, Luís V. ; Freitas, Paulo P.

Author_Institution

IMEC, Leuven, Belgium

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2820

Lastpage

2825

Abstract

We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The speed at which the magnetic memory signal can be read depends on many factors. An important factor is the magnetic element itself, the size, magnetic characteristics and absolute resistance. Secondly, the design of the read-out electronics is a key issue. A third determining factor is the technology in which the electronics are fabricated. Some features are indicated that are essential in optimizing MRAM in future

Keywords

magnetic storage; magnetoresistive devices; random-access storage; spin valves; MRAM architectures; absolute resistance; magnetic characteristics; magnetic element; magnetic memory signal; magnetic random access memory; magnetoresistive elements; nonvolatile magnetoresistive memory; read-out electronics; semiconductor components; spin valves; technology assessment; Anisotropic magnetoresistance; Conductors; Hall effect devices; Magnetic anisotropy; Magnetic devices; Magnetic semiconductors; Magnetic separation; Nonvolatile memory; Perpendicular magnetic anisotropy; Random access memory;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800992

Filename

800992