Title :
Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures
Author :
Chen, Rongsheng ; Zhou, Wei ; Zhang, Meng ; Kwok, Hoi Sing
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Top-gate n-type GaN thin-film transistors (TFTs) based on AlN/GaN heterostructures were fabricated. GaN and AlN thin films were sequentially deposited by the reactive dc magnetron sputtering technique at room temperature on quartz. The proposed GaN TFTs exhibit good electrical performance, such as field mobility of 2.5 cm2/V · s, threshold voltage of 2.4 V, on/off-current ratio of 1.2 × 105,and subthreshold swing of 0.5 V/dec. The proposed GaN TFT has great potential in the application of next-generation flat-panel displays.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; quartz; sputter deposition; thin film transistors; wide band gap semiconductors; AlGaN-GaN; ON-OFF-current ratio; next-generation flat-panel display; quartz; reactive DC magnetron sputtering technique; sequential deposition; subthreshold swing; temperature 293 K to 298 K; top-gate n-type TFT; top-gate n-type thin-film transistor; voltage 2.4 V; Capacitors; Gallium nitride; Nickel; Sputtering; Temperature measurement; Thin film transistors; AlN; GaN; dc sputtering; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2206555
