Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures

Author

Chen, Rongsheng ; Zhou, Wei ; Zhang, Meng ; Kwok, Hoi Sing

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

33

Issue

9

fYear

2012

Firstpage

1282

Lastpage

1284

Abstract

Top-gate n-type GaN thin-film transistors (TFTs) based on AlN/GaN heterostructures were fabricated. GaN and AlN thin films were sequentially deposited by the reactive dc magnetron sputtering technique at room temperature on quartz. The proposed GaN TFTs exhibit good electrical performance, such as field mobility of 2.5 cm²/V · s, threshold voltage of 2.4 V, on/off-current ratio of 1.2 × 10⁵,and subthreshold swing of 0.5 V/dec. The proposed GaN TFT has great potential in the application of next-generation flat-panel displays.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; quartz; sputter deposition; thin film transistors; wide band gap semiconductors; AlGaN-GaN; ON-OFF-current ratio; next-generation flat-panel display; quartz; reactive DC magnetron sputtering technique; sequential deposition; subthreshold swing; temperature 293 K to 298 K; top-gate n-type TFT; top-gate n-type thin-film transistor; voltage 2.4 V; Capacitors; Gallium nitride; Nickel; Sputtering; Temperature measurement; Thin film transistors; AlN; GaN; dc sputtering; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2206555

Filename

6265358