Title :
Modeling the effects of domains in magnetic tunnel junctions
Author :
Wong, Pak-Kin ; Evetts, Jan E. ; Blamire, Mark G.
Author_Institution :
Dept. of Mater. Sci. & Metall., Cambridge Univ., UK
fDate :
9/1/1999 12:00:00 AM
Abstract :
A model based on the domain structure of the electrodes in ferromagnet-insulator-ferromagnet tunnel junctions is derived. It provides an explicit expression of the junction magnetoresistance (MR) in terms of the magnetization of the ferromagnetic layers. The response in magnetic field of junctions with very high and very low MR are simulated, and the lack of fringing field coupling is proposed to be a reason for low MR. The effect of temperature on junction MR is discussed briefly in the context of the model
Keywords :
MIM structures; giant magnetoresistance; magnetic domains; magnetic multilayers; tunnelling; domain effects modelling; ferromagnet-insulator-ferromagnet tunnel junction; high magnetoresistance; junction magnetoresistance; low magnetoresistance; magnetic tunnel junctions; magnetization; Context modeling; Couplings; Electrodes; Magnetic domains; Magnetic tunneling; Magnetization; Magnetoresistance; Materials science and technology; Plasma temperature; Predictive models;
Journal_Title :
Magnetics, IEEE Transactions on
