An improved structure for multilevel magnetoresistive random access memory

Author

Jeong, Won-Cheol ; Lee, Byung-II ; Joo, Seung-Ki

Author_Institution

Coll. of Eng., Seoul Nat. Univ., South Korea

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2937

Lastpage

2939

Abstract

A new multilevel magnetoresistive random access memory (MRAM) has been developed. It consists of one sensing layer per storage layer. In this work, a MRAM with four different memory states has been demonstrated. With the NiFe/Cu/NiFeCo/Cu/NiFe/Cu/Co system, four distinguishable memory states can be obtained by applying a proper external magnetic field. It has been confirmed that the multilevel MRAM using pseudo spin valve MRAM mode alone can be established just with the adoption of one sensing layer per storage layer

Keywords

cobalt; cobalt alloys; copper; ferromagnetic materials; iron alloys; magnetic multilayers; magnetic storage; nickel alloys; random-access storage; spin valves; MRAM; NiFe-Cu-NiFeCo-Cu-NiFe-Cu-Co; NiFe/Cu/NiFeCo/Cu/NiFe/Cu/Co system; external magnetic field; memory states; multilevel magnetoresistive random access memory; pseudo spin valve MRAM mode; sensing layer; storage layer; structure; Argon; Educational institutions; Enhanced magnetoresistance; Giant magnetoresistance; Magnetic cores; Magnetic fields; Magnetization; Random access memory; Spin valves; Substrates;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.801035

Filename

801035