DocumentCode :
1262725
Title :
Bandgap engineering and quantum wells in optoelectronic devices
Author :
Li, E.H. ; Weiss, B.L.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Volume :
3
Issue :
2
fYear :
1991
fDate :
4/1/1991 12:00:00 AM
Firstpage :
63
Lastpage :
79
Abstract :
Integrated optoelectronic devices are becoming more important as the demand for low-cost devices for sophisticated applications increases. The paper reviews the techniques of bandgap engineering which can be used to control the characteristics of integrated optoelectronic devices fabricated with III-V semiconductors. In particular, the use of quantum wells as active and passive elements in devices such as waveguides, modulators, lasers and photodiodes is addressed. The flexibility of the performance obtained through the use of quantum wells is emphasised. Linear and nonlinear optical properties as well as the quantum confined Stark effect are discussed. The potential applications and fabrication techniques of lower dimensional semiconductor structures, such as quantum wires, are also described
Keywords :
energy gap; integrated optoelectronics; III-V semiconductors; bandgap engineering; fabrication techniques; integrated optoelectronic devices; lasers; linear optical properties; modulators; nonlinear optical properties; passive elements; photodiodes; quantum confined Stark effect; quantum wells; quantum wires; semiconductor structures; waveguides;
fLanguage :
English
Journal_Title :
Electronics & Communication Engineering Journal
Publisher :
iet
ISSN :
0954-0695
Type :
jour
Filename :
80104
Link To Document :
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