Title :
Bias voltage dependence of tunneling giant magnetoresistance in heterogeneous Fe-SiO2 granular films
Author :
Honda, S. ; Nawate, M. ; Umemoto, T. ; Mitsudo, S. ; Mitani, S. ; Fujimori, H. ; Motokawa, M.
Author_Institution :
Electron. & Control Syst. Eng., Shimane Univ., Matsue, Japan
fDate :
9/1/1999 12:00:00 AM
Abstract :
Fe-SiO2 granular films with CPP (current perpendicular to plane) structure have been prepared in various Ar gas pressures by RF magnetron sputtering. The temperature dependence of resistivity and the tunneling magnetoresistance is studied as a function of the bias voltage applied between the electrodes of the CPP structure. Peculiar behavior has been observed such as the bias voltage dependence of the magnetoresistance ratio and the linear decrease in the resistivity with H above 1 T
Keywords :
composite materials; discontinuous metallic thin films; giant magnetoresistance; iron; silicon compounds; sputtered coatings; tunnelling; Ar gas pressure dependence; CPP structure; Fe-SiO2; RF magnetron sputtering; bias voltage dependence; current perpendicular to plane structure; heterogeneous granular films; magnetoresistance ratio; resistivity; temperature dependence; tunneling giant magnetoresistance; Argon; Conductivity; Electrodes; Giant magnetoresistance; Iron; Magnetic field measurement; Magnetic films; Temperature dependence; Tunneling magnetoresistance; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
