Title :
Spin-valves using perovskite antiferromagnets as the pinning layers
Author :
Sakakima, H. ; Satomi, M. ; Hirota, E. ; Adachi, H.
Author_Institution :
Central Res. Lab., Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
fDate :
9/1/1999 12:00:00 AM
Abstract :
A new type of spin-valves using perovskite antiferromagnets, MFeO 8 (M=Y,La,Pr,Nd,Sm), as the pinning layers was developed. These spin-valves are composed of MFeO8/P/Cu/F, where P and F are the pinned and free layers, respectively, and were prepared by sputtering on Si or glass substrates. Among these spin-valves, LaFeO3/CoFe/Cu/CoFe showed large MR ratios, 11.4%, at RT and the MR ratios were stable even after the annealing at 350°C
Keywords :
annealing; antiferromagnetic materials; lanthanum compounds; magnetoresistance; neodymium compounds; praseodymium compounds; samarium compounds; spin valves; sputtered coatings; thermal stability; yttrium compounds; 300 K; 350 degC; LaFeO3-CoFe-Cu-CoFe; LaFeO3/CoFe/Cu/CoFe; LaFeO8; MFeO8 (M=Y,La,Pr,Nd,Sm); NdFeO8; PrFeO8; Si; Si substrate; SmFeO8; YFeO8; annealing; glass substrate; magnetoresistance ratio; perovskite antiferromagnet pinning layer; spin-valves; sputtered films; Annealing; Antiferromagnetic materials; Glass; Iron; Magnetic films; Neodymium; Semiconductor films; Sputtering; Substrates; Valves;
Journal_Title :
Magnetics, IEEE Transactions on
