• DocumentCode
    1262820
  • Title

    The optimum oxidation state of AlOx magnetic tunnel junctions

  • Author

    Gillies, M.F. ; Oepts, W. ; Kuiper, A.E.T. ; Coehoorn, R. ; Tamminga, Y. ; Snijders, J.H.M. ; Bik, W.M.Arnold

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    9/1/1999 12:00:00 AM
  • Firstpage
    2991
  • Lastpage
    2993
  • Abstract
    In this paper we present results on how both the resistance and the magnetoresistance of magnetic spin-tunnel junctions depend on the oxidation time used to form the AlOx barrier. The bias voltage dependence of junctions with barriers created with different oxidation times is measured and found to be optimal when the oxidation time is chosen to give sufficient oxygen for the barrier to be stoichiometric Al2O3. The oxygen content of the barrier was determined by Rutherford backscattering spectrometry and elastic recoil detection
  • Keywords
    Rutherford backscattering; aluminium compounds; electrical resistivity; magnetic multilayers; magnetoresistance; oxidation; stoichiometry; tunnelling; Al2O3; AlO; AlOx barrier; AlOx magnetic tunnel junctions; Co; FeMn; NiFe; Rutherford backscattering spectrometry; Ta; bias voltage dependence; elastic recoil detection; magnetoresistance; optimum oxidation state; oxidation time; oxidation times; oxygen content; resistance; spin-tunnel junctions; stoichiometric Al2O3; Backscatter; Electrical resistance measurement; Electrodes; Laboratories; Magnetic tunneling; Oxidation; Spectroscopy; Time measurement; Tunneling magnetoresistance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.801062
  • Filename
    801062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1262820