DocumentCode
1262952
Title
PLD growth of stoichiometric Fe3O4 thin films for spin tunneling devices
Author
Kiyomura, T. ; Gomi, M. ; Maruo, Y. ; Toyoshima, H.
Author_Institution
Dept. of Mater. Sci., Japan Adv. Inst. of Sci. & Tech., Ishikawa, Japan
Volume
35
Issue
5
fYear
1999
fDate
9/1/1999 12:00:00 AM
Firstpage
3046
Lastpage
3048
Abstract
Epitaxial thin films of Fe3-δO4 were prepared on (100) MgO substrates by pulsed laser deposition. These films had a smooth surface on an atomic scale along with extremely high crystalline quality. It was found from the resistivity and XPS measurements that thin films of nearly stoichiometric Fe3O 4 are obtained at 300°C in oxygen pressure of 1×10 -6 Torr and the conditions for growing the stoichiometric Fe 3O4 thin film lie in a narrow range. In addition, it was indicated that low temperature deposition below 200°C is required for the insulating oxide layer onto the Fe3O4 layer in the fabrication process of the tunneling junctions even at oxygen pressure as small as 1×10-5 Torr
Keywords
X-ray photoelectron spectra; electrical resistivity; ferromagnetic materials; iron compounds; magnetic epitaxial layers; pulsed laser deposition; stoichiometry; surface topography; (100) MgO substrates; 1E-5 torr; 1E-6 torr; 200 C; 300 C; Fe3-δO4; Fe3O4; MgO; PLD growth; XPS; epitaxial thin films; fabrication process; high crystalline quality; insulating oxide layer; low temperature deposition; oxygen pressure; pulsed laser deposition; resistivity; smooth surface; spin tunneling devices; stoichiometric Fe3O4; stoichiometric Fe3O4 thin films; tunneling junctions; Atomic beams; Atomic layer deposition; Atomic measurements; Crystallization; Iron; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.801080
Filename
801080
Link To Document