• DocumentCode
    1262956
  • Title

    Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe

  • Author

    Lee, Jinil ; Cho, Sunglae ; Ahn, Dongho ; Kang, Mansug ; Nam, Seokwoo ; Kang, Ho-Kyu ; Chung, Chilhee

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea
  • Volume
    32
  • Issue
    8
  • fYear
    2011
  • Firstpage
    1113
  • Lastpage
    1115
  • Abstract
    We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 109 cycles. Our results indicate that the scalable PRAM device enabling the use of PRAM in dynamic RAM and storage class memory applications can be realized using CVD GBT.
  • Keywords
    bismuth compounds; chemical vapour deposition; crystallisation; germanium compounds; phase change memories; CVD GeBiTe; GBT crystallization; GeBiTe; chemical-vapor-deposited GeBiTe; dynamic RAM; high-performance phase-change random access memory; scalable PRAM device; storage class memory; Bismuth; Crystallization; Phase change materials; Phase change random access memory; Sensors; Crystallization speed; GeBiTe (GBT); endurance; phase-change random access memory (PRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2157075
  • Filename
    5936663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1262956