Title :
Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe
Author :
Lee, Jinil ; Cho, Sunglae ; Ahn, Dongho ; Kang, Mansug ; Nam, Seokwoo ; Kang, Ho-Kyu ; Chung, Chilhee
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 109 cycles. Our results indicate that the scalable PRAM device enabling the use of PRAM in dynamic RAM and storage class memory applications can be realized using CVD GBT.
Keywords :
bismuth compounds; chemical vapour deposition; crystallisation; germanium compounds; phase change memories; CVD GeBiTe; GBT crystallization; GeBiTe; chemical-vapor-deposited GeBiTe; dynamic RAM; high-performance phase-change random access memory; scalable PRAM device; storage class memory; Bismuth; Crystallization; Phase change materials; Phase change random access memory; Sensors; Crystallization speed; GeBiTe (GBT); endurance; phase-change random access memory (PRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2157075
